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MJD112T4G

Manufacturer:

On Semiconductor

Mfr.Part #:

MJD112T4G

Datasheet:
Description:

BJTs DPAK-3 SMD/SMT NPN 20 W Collector Base Voltage (VCBO):100 V Collector Emitter Voltage (VCEO):100 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Voltage Rating (DC)100 V
Length6.73 mm
Width6.22 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height2.38 mm
PackagingReel
Halogen FreeHalogen Free
Radiation HardeningNo
RoHSCompliant
PolarityNPN - Darlington
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Current Rating2 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation20 W
Power Dissipation20 W
Max Collector Current2 A
Collector Emitter Breakdown Voltage100 V
Transition Frequency25 MHz
Continuous Collector Current2 A
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)100 V
Max Breakdown Voltage100 V
Collector Base Voltage (VCBO)100 V
Collector Emitter Saturation Voltage2 V
Emitter Base Voltage (VEBO)5 V
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current2 A
Transistor TypeNPN

Stock: 1928

Distributors
pcbx
Unit Price$0.45312
Ext.Price$0.45312
QtyUnit PriceExt.Price
1$0.45312$0.45312
10$0.34618$3.46180
25$0.30965$7.74125
50$0.27697$13.84850
100$0.24774$24.77400
300$0.23464$70.39200
500$0.22223$111.11500
1000$0.20574$205.74000